The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Sep. 08, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kyong-Taek Lee, Suwon-si, KR;
Sang-Woo Pae, Seongnam-si, KR;
Hye-Jin Kim, Hwaseong-si, KR;
June-Kyun Park, Seongnam-si, KR;
Hyun-Woo Lee, Goyang-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 27/00 (2006.01); H01L 27/11 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); G06F 17/5045 (2013.01); H01L 27/088 (2013.01); G06F 17/505 (2013.01); G06F 17/5022 (2013.01); G06F 17/5081 (2013.01); H01L 21/823462 (2013.01); H01L 27/1104 (2013.01);
Abstract
A system and method may determine the operating parameters, such as voltages, of MOS transistors within a circuit design by testing or simulation, for example and may identify a MOS transistor operating with its drain voltage higher than its gate voltage in the circuit. The design system and method may substitute a smaller transistor, having a high-k dielectric layer, for the original transistor in the circuit design.