The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Apr. 30, 2018
Applicant:

Abb Schweiz Ag, Baden, CH;

Inventors:

Samuel Hartmann, Staufen, CH;

Ulrich Schlapbach, Liebefeld, CH;

Assignee:

ABB Schweiz AG, Baden, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 25/07 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/5381 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 25/072 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/4846 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/49431 (2013.01); H01L 2224/49433 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10161 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/30107 (2013.01);
Abstract

A semiconductor module, comprises a substrate plate; a semiconductor switch chip and a diode chip attached to a collector conductor on the substrate plate, wherein the diode chip is electrically connected antiparallel to the semiconductor switch chip; wherein the semiconductor switch chip is electrically connected via bond wires to an emitter conductor on the substrate plate providing a first emitter current path, which emitter conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; wherein a gate electrode of the semiconductor switch chip is electrically connected via a bond wire to a gate conductor on the substrate plate providing a gate current path, which gate conductor is arranged oppositely to the semiconductor switch chip with respect to the diode chip; and wherein a protruding area of the emitter conductor runs besides the diode chip towards the first semiconductor switch chip and the first semiconductor switch chip is directly connected via a bond wire with the protruding area providing an additional emitter current path running at least partially along the gate current path. The semiconductor switch chip is a first semiconductor switch chip and the diode chip is a first diode chip, which are arranged in a first row. The semiconductor module comprises further a second row of a second semiconductor switch chip and a second diode chip attached to the collector conductor, wherein the diode chip of each row is electrically connected antiparallel to the semiconductor switch chip of the same row and the first and second rows are electrically connected in parallel. The first semiconductor switch chip is arranged besides the second diode chip and the second semiconductor chip is arranged besides the first diode chip.


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