The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Nov. 27, 2015
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/3213 (2006.01); H01L 29/47 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/04 (2006.01); H01L 29/40 (2006.01); H01L 23/36 (2006.01); H01L 23/373 (2006.01); H01L 23/433 (2006.01); H01L 23/31 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/0495 (2013.01); H01L 21/28 (2013.01); H01L 21/3205 (2013.01); H01L 21/32139 (2013.01); H01L 21/768 (2013.01); H01L 21/76865 (2013.01); H01L 23/3171 (2013.01); H01L 23/36 (2013.01); H01L 23/3735 (2013.01); H01L 23/4334 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0657 (2013.01); H01L 29/401 (2013.01); H01L 29/47 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01); H01L 23/3121 (2013.01); H01L 23/49562 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/8083 (2013.01); H01L 29/8611 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/33 (2013.01); H01L 2924/181 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes: a process of forming a Cu wiring electrode by a plating method above a semiconductor element using a wide bandgap semiconductor as a base material; a reducing process of reducing the Cu wiring electrode under a NHatmosphere; a heating process of heating the Cu wiring electrode at the same time as the reducing process; a process of forming a diffusion prevention film covering the Cu wiring electrode after the heating process; and a sealing process of covering the diffusion prevention film with an organic resin film.