The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Dec. 06, 2017
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Masao Uchida, Osaka, JP;
Abstract
Semiconductor deviceincludes semiconductor, an electric field relaxation structure, at least one surface electrode, passivation layer, and insulating layer. Semiconductor layerhas a predetermined element region. The electric field alleviation structure is disposed on semiconductorat an end of the element region. On semiconductor, surface electrodeis disposed inside the electric field alleviation structure when viewed in a normal direction of semiconductor. Passivation layercovers the electric field alleviation structure and a peripheral portion of at least one surface electrode, and has an opening portion above surface electrode. On surface electrode, insulating layeris disposed inside opening portionso as to be separated from passivation layer. When viewed in the normal direction of semiconductor, insulating layeris disposed so as to surround partial regionof surface electrode