The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Dec. 21, 2017
Applicant:

Honeywell International Inc., Morris Plains, NJ (US);

Inventors:

Desaraju Varaprasad, Dublin, CA (US);

Ronald R. Katsanes, Newark, CA (US);

Assignee:

Honeywell International Inc., Morris Plains, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/301 (2006.01); H01L 21/46 (2006.01); H01L 21/78 (2006.01); C09D 129/04 (2006.01); C09D 5/00 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); C09D 5/00 (2013.01); C09D 5/008 (2013.01); C09D 129/04 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/31058 (2013.01); H01L 21/6836 (2013.01); H01L 2221/68327 (2013.01);
Abstract

A method for temporarily protecting a semiconductor device wafer during processing includes preparing a solution including poly(vinyl alcohol) and water, coating the device wafer with the prepared solution, baking the coated device wafer to form a protective layer, processing the baked device wafer, and dissolving the protective layer from the processed wafer with a solvent at a temperature not less than 65° C. The solvent includes water. The baking is at a temperature from 150° C. to 170° C. The protective layer remains on the baked device wafer during processing. The poly(vinyl alcohol) has a degree of hydrolysis greater than or equal to 93%.


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