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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10276422 B1

PDFFull Text
Date of Patent:
Apr. 30, 2019

Filed:

Dec. 25, 2015

Semiconductor device substrate, semiconductor device wiring member and method for manufacturing them, and method for manufacturing semiconductor device using semiconductor device substrate

Applicant:

Ohkuchi Materials Co., Ltd., Kagoshima, JP;

Inventor:

Satoshi Kubota, Kagoshima, JP;

Assignee:

Ohkuchi Materials Co., Ltd., Kagoshima, JP;

Attorney:

Wenderoth, Lind & Ponack, L.L.P.

Primary Examiner:

Sitaramarao S Yechuri

Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 23/12 (2006.01); H01L 23/14 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/50 (2006.01); H01L 21/56 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 23/12 (2013.01); H01L 23/14 (2013.01); H01L 23/29 (2013.01); H01L 23/31 (2013.01); H01L 23/49558 (2013.01); H01L 23/49575 (2013.01); H01L 23/49816 (2013.01); H01L 23/50 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/83 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16057 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device substrate and wiring member including a first noble metal plating layer to become internal terminals is formed at predetermined sites on a metal plate, a metal plating layer is formed on the first noble metal plating layer as having a same shape as the first noble metal plating layer, a second noble metal plating layer to become external terminals is formed on a part of the metal plating layer, and a height of a surface of the second noble metal plating layer from a surface of the metal plate is larger than a height of a surface of the first noble metal plating layer from the surface of the metal plate.

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