The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Sep. 18, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Seongyeol Yoo, Beijing, CN;

Seungjin Choi, Beijing, CN;

Youngsuk Song, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/44 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01);
Abstract

The invention relates to a method for fabricating an array substrate, an array substrate and a display device. The method for fabricating an array substrate may comprise: forming a pattern including a source electrode, a drain electrode and a data line; forming a non-crystalline semiconductor thin film layer; and performing annealing, so as to convert only the non-crystalline semiconductor thin film layer on the source electrode, drain electrode and data line to a metal semiconductor compound. By converting only the non-crystalline semiconductor thin film layer on the source electrode, drain electrode and data line into a metal semiconductor compound, the resulting metal semiconductor compound may prevent oxidative-corrosion of the metal thin film layer, such as a low-resistance metal (e.g., Cu or Ti) layer, in the subsequent procedures, which is favorable for the fabrication of a metal oxide thin film transistor using Cu or Ti.


Find Patent Forward Citations

Loading…