The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Feb. 02, 2017
Applicant:

Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);

Inventors:

Karthik Padmanabhan, San Jose, CA (US);

Madhur Bobde, Santa Clara, CA (US);

Lingpeng Guan, San Jose, CA (US);

Lei Zhang, Shanghai, CN;

Hamza Yilmaz, Saratoga, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 29/0634 (2013.01); H01L 29/0661 (2013.01); H01L 29/0676 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66689 (2013.01); H01L 29/7802 (2013.01); H01L 29/7803 (2013.01); H01L 29/7816 (2013.01); H01L 29/7823 (2013.01); H01L 21/26513 (2013.01); H01L 29/0653 (2013.01); H01L 29/42376 (2013.01);
Abstract

A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench. The simultaneous N and P angled implants use different implant energies and dopants of different diffusion rate so that after annealing, alternating N and P thin semiconductor regions are formed. The alternating N and P thin semiconductor regions form a superjunction structure where a balanced space charge region is formed to enhance the breakdown voltage characteristic of the semiconductor device.


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