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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10276385 B1

PDFFull Text
Date of Patent:
Apr. 30, 2019

Filed:

Apr. 29, 2016

Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light

Applicant:

Screen Holdings Co., Ltd., Kyoto-shi, JP;

Inventors:

Kazuhiko Fuse, Kyoto, JP;

Shinichi Kato, Kyoto, JP;

Kenichi Yokouchi, Kyoto, JP;

Assignee:

SCREEN Holdings Co., Ltd., Kyoto, JP;

Attorney:

Ostrolenk Faber LLP

Primary Examiner:

Mary A Wilczewski

Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/268 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); F27B 17/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2253 (2013.01); F27B 17/0025 (2013.01); H01L 21/02694 (2013.01); H01L 21/2686 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/68707 (2013.01); H01L 21/68742 (2013.01);
Abstract

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

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