The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Dec. 04, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jun Xue, San Jose, CA (US);

Ludovic Godet, Sunnyvale, CA (US);

Martin A. Hilkene, Gilroy, CA (US);

Matthew D. Scotney-Castle, Morgan Hill, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 14/04 (2006.01); H01L 21/033 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); C23C 14/046 (2013.01); H01J 37/321 (2013.01); H01J 37/32422 (2013.01); H01L 21/0243 (2013.01); H01L 21/02274 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02631 (2013.01); H01L 21/02639 (2013.01); H01L 21/033 (2013.01); H01L 21/67253 (2013.01);
Abstract

Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.


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