The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Apr. 29, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Evelyn Napetschnig, Diex, AT;

Sandra Wirtitsch, Bad Bleiberg, AT;

Mario Barusic, Seeboden, AT;

Aleksander Hinz, Villach, AT;

Robert Hartl, Regensburg, DE;

Georg Schinner, Munich, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 21/306 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02068 (2013.01); H01L 21/0209 (2013.01); H01L 21/02082 (2013.01); H01L 21/2251 (2013.01); H01L 21/30604 (2013.01); H01L 21/3247 (2013.01); H01L 29/167 (2013.01);
Abstract

According to various embodiments, a method for processing a semiconductor region, wherein the semiconductor region comprises at least one precipitate, may include: forming a precipitate removal layer over the semiconductor region, wherein the precipitate removal layer may define an absorption temperature at which a chemical solubility of a constituent of the at least one precipitate is greater in the precipitate removal layer than in the semiconductor region; and heating the at least one precipitate above the absorption temperature.


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