The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

Aug. 31, 2012
Applicant:

Hidetaka Nishida, Hiroshima, JP;

Inventor:

Hidetaka Nishida, Hiroshima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G06F 17/50 (2006.01); G01M 5/00 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5009 (2013.01); G01M 5/0033 (2013.01); G01N 2203/0062 (2013.01); G01N 2203/0066 (2013.01); G06F 2217/16 (2013.01); G06F 2217/80 (2013.01);
Abstract

A method of predicting growth of a crack in a member includes memorizing, for each portion on the member, stress distribution Δσ(a) in the depth direction obtained in the case that no crack is present, a relationship between depth of growing cracks and creep contribution, and a relationship between creep contribution and parameters C and m of the Paris's law, receiving from a user an indication of a certain portion on the member, acquiring the stress distribution Δσ(a) in the depth direction for the certain portion, acquiring a creep contribution at the depth of a growing crack for the certain portion, from the relationship between depth of cracks and creep contribution memorized for the certain portion, and acquiring parameters C and m corresponding to the acquired creep contribution, from the relationship between creep contribution and parameters C and m of the Paris's law memorized for the certain portion.


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