The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2019

Filed:

May. 30, 2017
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Ka-Yi Yeh, Hsinchu, TW;

Chun-Lung Lin, Taipei, TW;

Shau-Yin Tseng, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/20 (2012.01); G03F 7/20 (2006.01); G02B 26/12 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70383 (2013.01); G02B 26/123 (2013.01); G03F 7/70275 (2013.01); G03F 7/70291 (2013.01); G03F 7/70508 (2013.01);
Abstract

An exposing method adapted to a maskless photolithography process. The exposing method includes reading an exposure file; obtaining a plurality of coordinate information corresponding to a plurality of patterns contained in the exposure file, according to the exposure file; generating graphical data, according to the plurality of coordinate information; generating scanning data corresponding to each of a plurality of polygon mirrors or each of at least one polygon mirror group, according to the graphical data and a configuration of the polygon mirrors, wherein every two rotation directions of every two adjacent polygon mirrors of the plurality of polygon mirrors are different, or every two rotation directions of every two adjacent polygon mirrors of the at least one polygon mirror group are different.


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