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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10272537 B1

PDFFull Text
Date of Patent:
Apr. 30, 2019

Filed:

Mar. 26, 2015

Method for polishing gan single crystal material

Applicant:

Noritake Co., Limited, Nagoya-shi, Aichi, JP;

Inventors:

Makoto Sato, Nagoya, JP;

Wataru Omori, Nagoya, JP;

Maiko Takahashi, Nagoya, JP;

Assignee:

NORITAKE CO., LIMITED, Nagoya, JP;

Attorney:

Oliff PLC

Primary Examiner:

Timothy V Eley

Int. Cl.
CPC ...
H01L 37/00 (2006.01); B24B 37/04 (2012.01); B24B 7/22 (2006.01); C08L 63/00 (2006.01); H01L 21/306 (2006.01); C09G 1/02 (2006.01); C09G 1/16 (2006.01); H01L 21/02 (2006.01); C08L 81/06 (2006.01);
U.S. Cl.
CPC ...
B24B 37/044 (2013.01); B24B 7/228 (2013.01); C08L 63/00 (2013.01); C08L 81/06 (2013.01); C09G 1/02 (2013.01); C09G 1/16 (2013.01); H01L 21/02024 (2013.01); H01L 21/30625 (2013.01);
Abstract

A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, in which the crystal material is a single crystal of GaN, and the polishing liquid is an oxidizing polishing liquid having an oxidation-reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH between 0.1 and 6.5: Ehmin (mV)=−33.9 pH+750 . . . (1) Ehmax (mV)=−82.1 pH+1491 . . . (2).

Find Patent Forward Citations

Sato, Makoto. (2019). Method for polishing gan single crystal material (U.S. Patent No. 10272537). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10272537

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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