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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10270049 B1

PDFFull Text
Date of Patent:
Apr. 23, 2019

Filed:

Apr. 13, 2018

Electrode material for organic semiconductor device, method for forming electrode pattern, and organic thin-film transistor

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventor:

Kenichi Umeda, Ashigara-kami-gun, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Shaun M Campbell

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 21/288 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 51/105 (2013.01); H01L 21/28 (2013.01); H01L 21/288 (2013.01); H01L 29/417 (2013.01); H01L 29/786 (2013.01); H01L 51/0022 (2013.01); H01L 51/05 (2013.01); H01L 51/0545 (2013.01); H01L 51/0074 (2013.01); H01L 51/0078 (2013.01); H01L 51/0558 (2013.01);
Abstract

An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor. An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic π-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic π-conjugated ligand is a ligand having at least one hydrophilic substituent.

Find Patent Forward Citations

Umeda, Kenichi. (2019). Electrode material for organic semiconductor device, method for forming electrode pattern, and organic thin-film transistor (U.S. Patent No. 10270049). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10270049

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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