The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Oct. 22, 2015
Applicants:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

The University of Tokyo, Bunkyo-ku, Tokyo, JP;

Inventors:

Takako Fujiwara, Tokyo, JP;

Masakazu Sugiyama, Tokyo, JP;

Mathew Manish, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/36 (2010.01); H01L 33/62 (2010.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 51/0082 (2013.01); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/36 (2013.01); H01L 33/62 (2013.01); H01L 51/0081 (2013.01);
Abstract

A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a first light-emitting layer; a second light-emitting layer; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a base layer with composition subject to stress strain from the first semiconductor layer and has a plurality of base segments partitioned into a random net shape; and a first quantum well structure layer composed of at least one quantum well layer and at least one barrier layer. The second light-emitting layer has a second quantum well structure layer composed of a plurality of barrier layers that have different compositions from that of the at least one barrier layer of the first quantum well structure layer, and at least one quantum well layer.


Find Patent Forward Citations

Fujiwara, Takako. (2019). Semiconductor light-emitting element (U.S. Patent No. 10270045). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10270045

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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