The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jan. 07, 2018
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Min Jang, Ansan-si, KR;

Chang Youn Kim, Ansan-si, KR;

Jae Hee Lim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/46 (2010.01); H01L 33/20 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/20 (2013.01); H01L 33/46 (2013.01); H01L 33/505 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01); H01L 33/382 (2013.01);
Abstract

Disclosed is a light emitting diode including a side reflection layer. The light emitting diode includes a substrate having a side surface and an upper surface; a semiconductor stack disposed under the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an ohmic reflection layer electrically connected to the second conductivity type semiconductor layer; a first bump pad disposed under the ohmic reflection layer and electrically connected to the first conductivity type semiconductor layer; a second bump pad disposed under the ohmic reflection layer and electrically connected to the second conductivity type semiconductor layer; a side reflection layer covering the side surface of the substrate; and a capping layer covering the upper surface of the substrate and the side reflection layer.


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