The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Mar. 14, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kathryn C. Fisher, Scotsdale, AZ (US);

Qiang Huang, Croton on Hudson, NY (US);

Satyavolu S. Papa Rao, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25D 7/12 (2006.01); H01L 31/0224 (2006.01); H01L 21/288 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); C25D 3/38 (2006.01); C25D 3/56 (2006.01); C25D 3/58 (2006.01); C25D 3/60 (2006.01); C25D 3/62 (2006.01); C25D 3/64 (2006.01); C25D 5/10 (2006.01); C25D 5/12 (2006.01); C25D 5/50 (2006.01); C25D 5/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022433 (2013.01); C25D 3/38 (2013.01); C25D 3/56 (2013.01); C25D 3/562 (2013.01); C25D 3/567 (2013.01); C25D 3/58 (2013.01); C25D 3/60 (2013.01); C25D 3/62 (2013.01); C25D 3/64 (2013.01); C25D 5/006 (2013.01); C25D 5/10 (2013.01); C25D 5/12 (2013.01); C25D 5/50 (2013.01); C25D 7/12 (2013.01); H01L 21/2885 (2013.01); H01L 21/76841 (2013.01); H01L 23/53238 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1864 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/50 (2013.01);
Abstract

A photovoltaic device, such as a solar cell, including a copper-containing-grid metallization structure that contains a metal phosphorus layer as a diffusion barrier is provided. The copper-containing-grid metallization structure includes, from bottom to top, an electroplated metal phosphorus layer that does not include copper or a copper alloy located within a grid pattern formed on a front side surface of a semiconductor substrate, and an electroplated copper-containing layer. A method of forming such a structure is also provided.


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