The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 25, 2014
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventors:
Yong Won Lee, Bucheon-si, KR;
Jin Woo Han, Bucheon-si, KR;
Dae Won Hwang, Seoul, KR;
Kyung Wook Kim, Seoul, KR;
Assignee:
MagnaChip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/66143 (2013.01); H01L 29/66734 (2013.01); H01L 29/7806 (2013.01); H01L 29/7813 (2013.01); H01L 29/407 (2013.01);
Abstract
A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.