The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Mar. 22, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jae Hong Kwon, Seoul, KR;

Youngho Lee, Hwaseong-si, KR;

Hoon Lim, Seoul, KR;

Hyungsoon Jang, Hwaseong-si, KR;

Eunguk Chung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 49/02 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 28/00 (2013.01); H01L 29/0852 (2013.01); H01L 29/1608 (2013.01); H01L 29/66545 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/66681 (2013.01); H01L 29/7834 (2013.01); H01L 29/1045 (2013.01); H01L 29/1083 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.


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