The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Feb. 25, 2016
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Zhandong Zhang, Wuhan, CN;
Fuhsiung Tang, Wuhan, CN;
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan, Hubei, CN;
Abstract
The present invention provides a manufacture method of a Low Temperature Poly-silicon TFT substrate and a Low Temperature Poly-silicon TFT substrate, in which by locating one heat sink layer under the amorphous silicon layer in advance, the difference of the crystallizations of the polysilicons in the drive area and the display area can exist after implementing an Excimer Laser Annealing process to the amorphous silicon layer, and in the drive area, the polysilicon with the larger lattice dimension is formed to promote the electron mobility; the fractured crystals can be achieved in the crystallization process of the display area to form the polysilicon with the smaller lattice dimension for ensuring the uniformity of the grain boundary and raising the uniformity of the current, and thus, the electrical property demands for the different TFTs can be satisfied to raise the light uniformity of the OLED.