The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jun. 22, 2017
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Huicai Zhong, San Jose, CA (US);

Qingqing Liang, Lagrangeville, NY (US);

Haizhou Yin, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/49 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/105 (2006.01); H01L 27/088 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4983 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/1052 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 27/10888 (2013.01); H01L 27/10891 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device includes a semiconductor substrate, a first device, and a second device. Each of the first and second devices includes a gate extending in a first direction, source/drain regions respectively formed on opposite first and second sides of the gate, dielectric spacers formed respectively on outer sidewalls of the gate on the first side and the second side, and conductive spacers serving contacts to the source/drain regions and formed respectively on outer sidewalls of the respective gate spacers. A second direction from the source/drain region on the first side to the source/drain region on the second side crosses the first direction.


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