The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jan. 08, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Suk Gyu Hahm, Gyungju-si, KR;
Jeong Il Park, Seongnam-si, KR;
Youngjun Yun, Yongin-si, KR;
Joo Young Kim, Hwaseong-si, KR;
Yong Uk Lee, Gwangju-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.