The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 13, 2017
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Shinya Iwasaki, Toyota, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A method of manufacturing a semiconductor device, the method comprising: forming trenches in an upper surface of a semiconductor substrate, the semiconductor substrate comprising a first region and a second region, the trenches in the first region having a wide width, and the trenches in the second region having a narrow width; forming insulating films on inner surfaces of the trenches; filling conductive material inside the trenches; etching the conductive material until each of upper surfaces of the conductive material filled inside the trenches becomes lower than the upper surface of the semiconductor substrate; and forming, after the etching of the conductive material, an impurity layer by implanting impurities to a predetermined depth range, the impurity layer having a concentration by which a conductivity type of a region opposed to the conductive material via each insulating film is inverted by a potential applied to the conductive material.