The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jan. 02, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Carl J Radens, LaGrangeville, NY (US);

Richard Q Williams, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 23/535 (2006.01); H01L 21/027 (2006.01); H01L 21/306 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/45 (2006.01); H01L 23/522 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/0273 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 21/6835 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53257 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/785 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68359 (2013.01);
Abstract

A structure of a semiconductor device is described. A semiconductor device includes a transistor which further includes a gate structure, a source region and a drain region disposed on a first surface of a substrate. A wiring layer of conductive material is disposed over a second surface of the substrate. The second surface of the substrate is located opposite to the first surface of the substrate. A set of contact studs including a first contact stud which extends completely through the source region and through the substrate to a first respective portion of the wiring layer. The set of contact studs also includes a second contact stud which extends completely through the drain region and through the substrate to a second respective portion of the wiring layer.


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