The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Dec. 11, 2014
Sony Corporation, Tokyo, JP;
Takashi Yokoyama, Kanagawa, JP;
Taku Umebayashi, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A semiconductor device of the technology includes a first diffusion section (), a second diffusion section (), a channel section (), a gate section (), and a stress application section (, or). In a semiconductor layer () having a groove (A), the first diffusion section () is formed at or in the vicinity of a bottom of the groove (A), the second diffusion section () is formed at an upper end of the groove (A), and the channel section () is formed between the first diffusion section () and the second diffusion section (). The gate section () is buried in the groove (A) at a position opposing the channel section (). The stress application section (, or) applies one of compressive stress and tensile stress to the channel section () in a normal direction to the semiconductor layer ().