The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jan. 29, 2016
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Tohoku University, Sendai-shi, JP;

Inventors:

Yushi Kato, Chofu, JP;

Tadaomi Daibou, Yokohama, JP;

Eiji Kitagawa, Yokohama, JP;

Takao Ochiai, Funabashi, JP;

Junichi Ito, Yokohama, JP;

Takahide Kubota, Sendai, JP;

Shigemi Mizukami, Sendai, JP;

Terunobu Miyazaki, Sendai, JP;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

TOHOKU UNIVERSITY, Sendai-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnGa)Pt, the (MnGa)Pthaving a tetragonal crystal structure, where 45 atm %≤x≤75 atm %, 25 atm %≤y≤55 atm %, x+y=100 atm %, and 0 atm %<z≤7 atm %.


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