The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Jun. 06, 2016
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Christopher Parks, Pittsford, NY (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A method of forming a microlens may include using two layers of photoresist. The first photoresist layer may be patterned to form a first portion of a pixel microlens. A second photoresist layer may be patterned on top of the first portion of the pixel microlens. The second photoresist may then be melted so that the second photoresist layer has a curved upper surface. The first and second photoresist layers may combine to form the pixel microlens. The indices of refraction of the first and second photoresist layers may the same or different. The melting point of the second photoresist may be lower than the melting point of the first photoresist.