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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10269832 B1

PDFFull Text
Date of Patent:
Apr. 23, 2019

Filed:

Sep. 30, 2015

Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display panel

Applicant:

Joled Inc., Tokyo, JP;

Inventor:

Hiroshi Hayashi, Tokyo, JP;

Assignee:

JOLED INC., Tokyo, JP;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Trang Q Tran

Int. Cl.
CPC ...
H01L 27/12 (2006.01); G09F 9/30 (2006.01); H01L 21/8234 (2006.01); H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 51/50 (2006.01); G09F 9/33 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G09F 9/30 (2013.01); G09F 9/33 (2013.01); H01L 21/8234 (2013.01); H01L 27/08 (2013.01); H01L 27/088 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1229 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78645 (2013.01); H01L 29/78696 (2013.01); H01L 51/50 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin film transistor substrate includes: a substrate; and a first thin film transistor and a second thin film transistor that are disposed on the substrate. The first thin film transistor includes a first gate electrode and a first oxide semiconductor layer that is used as a channel. The second thin film transistor includes a second gate electrode and a second oxide semiconductor layer that is used as a channel. The first oxide semiconductor layer includes a first oxide semiconductor material that is different in mobility from a second oxide semiconductor material that the second oxide semiconductor layer includes.

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Hayashi, Hiroshi. (2019). Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display panel (U.S. Patent No. 10269832). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10269832

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