The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Oct. 26, 2016
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Matthew Ryder, Bend, OR (US);

Rio Rivas, Bend, OR (US);

Assignee:

QORVO US, INC., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); G01N 29/22 (2006.01); G01N 29/24 (2006.01); G01N 29/036 (2006.01);
U.S. Cl.
CPC ...
G01N 29/036 (2013.01); G01N 29/222 (2013.01); G01N 29/2437 (2013.01); G01N 2291/014 (2013.01); G01N 2291/0255 (2013.01); G01N 2291/0426 (2013.01); H03H 3/02 (2013.01); H03H 9/131 (2013.01); H03H 9/175 (2013.01);
Abstract

A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding) material. The interface layer and/or an overlying blocking layer are precisely patterned to control locations of the interface layer available to receive a self-assembled monolayer (SAM), thereby addressing issues of misalignment and oversizing of a functionalization zone that would arise by relying solely on microarray spotting. Atomic layer deposition may be used for deposition of the interface layer and/or an optional hermeticity layer. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided.


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