The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Apr. 24, 2017
Applicant:

Innovative Advanced Materials, Inc., Hampton, GA (US);

Inventor:

William Alan Doolittle, Hampton, GA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C30B 23/06 (2006.01); C23C 14/24 (2006.01); C23C 14/28 (2006.01); C30B 23/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C23C 14/243 (2013.01); C23C 14/28 (2013.01); C30B 23/005 (2013.01); H01J 37/32082 (2013.01); H01J 2237/332 (2013.01);
Abstract

A physical vapor deposition system includes a deposition chamber; a wafer support structure disposed within the deposition chamber and configured to support at least one wafer thereon, and at least one effusion cell disposed at least partially outside the deposition chamber and coupled to a wall of the deposition chamber. The at least one effusion cell is configured to generate physical vapor by evaporation or sublimation of material within the at least one effusion cell, and to inject the physical vapor into the deposition chamber through an aperture in the wall of the deposition chamber. The at least one effusion cell is configured such that the at least one effusion cell can be filled with the material to be evaporated or sublimated without removing the at least one effusion cell from the deposition chamber and without interrupting a deposition process performed using the deposition system.


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