The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Oct. 25, 2017
Nanosys, Inc., Milpitas, CA (US);
Erik C. Scher, San Francisco, CA (US);
Mihai A. Buretea, San Francisco, CA (US);
William P. Freeman, San Mateo, CA (US);
Joel Gamoras, Vallejo, CA (US);
Baixin Qian, Cupertino, CA (US);
Jeffrey A. Whiteford, Belmont, CA (US);
Nanosys, Inc., Milpitas, CA (US);
Abstract
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.