The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Aug. 03, 2017
Google Inc., Mountain View, CA (US);
University of Maryland, College Park, College Park, MD (US);
David K. Fork, Mountain View, CA (US);
Jeremy N. Munday, North Bethesda, MD (US);
Tarun Narayan, Washington, DC (US);
Joseph B. Murray, Laurel, MD (US);
Google Inc., Mountain View, CA (US);
University of Maryland, College Park, College Park, MD (US);
Abstract
Enhanced Coulomb repulsion (electron) screening around light element nuclei is achieved by way of utilizing target structures (e.g., nanoparticles) that undergo plasmon oscillation when subjected to electromagnetic (EM) radiation, whereby transient high density electron clouds are produced in localized regions of the target structures during each plasmon oscillation cycle. Each target structure includes an integral body composed of an electrically conductive material that contains light element atoms (e.g., metal hydrides, metal deuterides or metal tritides). The integral body is also configured (i.e., shaped/sized) to undergo plasmon oscillations in response to the applied EM radiation such that the transient high density electron clouds are formed during each plasmon oscillation cycle, whereby brief but significantly elevated charge density variations are generated around light element (e.g., deuterium) atoms located in the localized regions, thereby enhancing Coulomb repulsion screening to enhance nuclear fusion reaction rates. Various target structure compositions and configurations are disclosed.