The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
May. 11, 2015
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Tsuyoshi Suzuki, Kanagawa, JP;
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0948 (2006.01); H01L 27/092 (2006.01); H03K 19/094 (2006.01); G01R 31/26 (2014.01); H01L 21/66 (2006.01); H03K 19/173 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0948 (2013.01); G01R 31/2621 (2013.01); H01L 22/34 (2013.01); H01L 27/092 (2013.01); H03K 19/094 (2013.01); H03K 19/1737 (2013.01);
Abstract
[Object] To provide a semiconductor apparatus and a method of controlling a MOS transistor, with which a leak current of the MOS transistor can be suppressed. [Solving Means] A semiconductor apparatus includes a MOS transistor and a voltage application unit that applies, when the MOS transistor is off, a voltage for controlling a threshold value of the MOS transistor in a shallower direction onto a substrate of the MOS transistor.