The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jun. 19, 2017
Applicant:
Sitime Coporation, Santa Clara, CA (US);
Inventors:
Joseph C. Doll, Mountain View, CA (US);
Paul M. Hagelin, Saratoga, CA (US);
Ginel C. Hill, Sunnyvale, CA (US);
Nicholas Miller, Sunnyvale, CA (US);
Charles I. Grosjean, Los Gatos, CA (US);
Assignee:
SiTime Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/09 (2006.01); H01L 41/22 (2013.01); H03H 9/02 (2006.01); H03H 9/24 (2006.01); H01L 41/253 (2013.01); H01L 41/29 (2013.01); H01L 41/314 (2013.01); H01L 41/047 (2006.01); H03H 3/02 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02448 (2013.01); H01L 41/0478 (2013.01); H01L 41/253 (2013.01); H01L 41/29 (2013.01); H01L 41/314 (2013.01); H03H 9/02362 (2013.01); H03H 9/2452 (2013.01); H03H 2003/027 (2013.01); H03H 2009/02307 (2013.01); H03H 2009/155 (2013.01);
Abstract
Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.