The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Sep. 28, 2017
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

Christopher M. Laighton, Boxborough, MA (US);

Alan J. Bielunis, Hampstead, NH (US);

Edward A. Watters, Carlisle, MA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 2200/225 (2013.01); H03F 2200/391 (2013.01); H03F 2200/451 (2013.01); H03F 2200/465 (2013.01);
Abstract

An amplifier having a Radio Frequency (RF) power level detector circuit for producing a control signal in accordance with a power level of an RF input signal. The control signal indicates whether the power level of the input signal is within a predetermined range of power levels greater than zero. A bias circuit is fed by the control signal, for producing a fixed bias voltage at a gate electrode of a field effect transistor (FET) to establish a predetermined quiescent current for the FET when the control signal indicates the power level of the RF input signal is within the predetermined range of power levels and to reduce the bias voltage to reduce the predetermined quiescent current when the control signal indicates the power level of the RF input signal is below the predetermined range of power levels.


Find Patent Forward Citations

Loading…