The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Aug. 27, 2015
Applicant:

Sanyo Electric Co., Ltd., Daito-shi, Osaka, JP;

Inventors:

Na Wang, Osaka, JP;

Shinji Kasamatsu, Tokushima, JP;

Yoshio Kato, Osaka, JP;

Assignee:

SANYO Electric Co., Ltd., Daito-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/133 (2010.01); H01M 4/38 (2006.01); H01M 4/48 (2010.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01); H01M 4/134 (2010.01); H01M 4/36 (2006.01); H01M 4/485 (2010.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/364 (2013.01); H01M 4/48 (2013.01); H01M 4/485 (2013.01); H01M 4/587 (2013.01); H01M 10/0525 (2013.01); H01M 10/052 (2013.01); H01M 2004/021 (2013.01);
Abstract

A non-aqueous electrolyte secondary battery including a silicon material as a negative electrode active material has good discharge rate characteristics. A negative electrode according to an exemplary embodiment includes a negative-electrode current collector and a negative-electrode mixture layer formed on the current collector. The negative-electrode mixture layer contains graphite and a silicon material. A first region that extends from the surface of the mixture layer remote from the negative-electrode current collector in the thickness direction of the negative-electrode mixture layer and has a thickness equal to 40% of the thickness of the mixture layer contains a larger amount of the silicon material than a second region that extends from the surface of the mixture layer adjacent to the negative-electrode current collector and has a thickness equal to 40% of the thickness of the mixture layer. The first region has a lower density than the second region.


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