The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Sep. 25, 2017
Applicant:

Nichia Corporation, Anan-shi, Tokushima, JP;

Inventors:

Tomohiro Shimooka, Tokushima, JP;

Masahiko Sano, Anan, JP;

Naoki Azuma, Katsuura-gun, JP;

Assignee:

NICHIA CORPORATION, Anan-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/20 (2010.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/20 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01);
Abstract

A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of projections disposed at the main surface, the plurality of projections including at least one projection having an elongated shape in a plan view; and a nitride semiconductor layer disposed on the main surface of the sapphire substrate. The at least one projection has an outer edge extending in a longitudinal direction of the elongated shape, the outer edge extending in a direction oriented at an angle in a range of −10° to +10° with respect to an a-plane of the sapphire substrate in the plan view.


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