The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Apr. 09, 2018
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Xue Wang, Regensburg, DE;

Markus Broell, Regensburg, DE;

Stefan Barthel, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/06 (2010.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 31/03046 (2013.01); H01L 31/035263 (2013.01); H01L 33/30 (2013.01);
Abstract

A semiconductor chip () is described comprising a semiconductor layer sequence () based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence () contains a p-type semiconductor region () and an n-type semiconductor region (). The n-type semiconductor region () comprises a superlattice structure () for improving current spreading, wherein the superlattice structure () has a periodic array of semiconductor layers (). A period of the superlattice structure () has at least one undoped first semiconductor layer () and a doped second semiconductor layer (), wherein an electronic band gap Eof the doped second semiconductor layer () is larger than an electronic band gap Eof the undoped first semiconductor layer ().


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