The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Sep. 26, 2016
Applicant:
Sony Corporation, Tokyo, JP;
Inventors:
Yuuki Isobe, Miyagi, JP;
Hidekazu Kawanishi, Miyagi, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); C23C 16/34 (2006.01); H01L 21/205 (2006.01); H01S 5/343 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); C23C 16/34 (2013.01); H01L 21/205 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/325 (2013.01); H01S 5/343 (2013.01);
Abstract
A semiconductor light-emitting device according to an embodiment of the present disclosure includes a nitride-based first light-emitting layer. The first light-emitting layer has an InGaN layer (a≥0), and has a plurality of first island-shaped regions that include InGaN (b>a) inside the InGaN layer.
Isobe, Yuuki. (2019). Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device (U.S. Patent No. 10263141). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10263141
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile