The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jan. 08, 2017
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Hsiang-lin Hsieh, Xiamen, CN;
Zhibo Xu, Xiamen, CN;
Cheng-hung Lee, Xiamen, CN;
Chan-chan Ling, Xiamen, CN;
Chang-cheng Chuo, Xiamen, CN;
Chia-hung Chang, Xiamen, CN;
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Abstract
A fabrication method of a nitride semiconductor LED includes, an AlInGaN material layer is deposited by CVD between an AlN thin film layer by PVD and a gallium nitride series layer by CVD, to reduce the stress effect between the AlN thin film layer and the nitride layer, improve the overall quality of the LED and efficiency. An AlN thin film layer is deposited on a patterned substrate having a larger depth by PVD, and a thin nitrogen epitaxial layer is deposited on the AIN thin film layer by CVD, which reduces the stress by reducing the thickness of the epitaxial layer and improves warpage of the wafer and electric uniformity of the single wafer; the light extraction efficiency is improved by using the large depth patterned substrate; further, the doping of high-concentration impurity in the active layer effectively reduces voltage characteristics without affecting leakage, thereby improving the overall yield.