The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Oct. 25, 2017
Applicant:
Los Alamos National Security, Llc, Los Alamos, NM (US);
Inventor:
Jinkyoung Yoo, Los Alamos, NM (US);
Assignee:
Triad National Security, LLC, Los Alamos, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/02 (2006.01); H01L 33/34 (2010.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1816 (2013.01); C30B 29/602 (2013.01); H01L 21/0234 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02527 (2013.01); H01L 21/02609 (2013.01); H01L 33/34 (2013.01);
Abstract
A semiconductor film includes a two-dimensional (2D) material layer having a hexagonal in-plane lattice structure, and a substantially planar Group IV semiconductor layer having a direct band gap on the 2D material layer. A method of fabricating a semiconductor material includes growing a Group IV semiconductor material on a two-dimensional material having a hexagonal in-plane lattice structure. This growth process results in the Group IV semiconductor material having a direct band gap. The semiconductor films may be used in any optoelectronic device, including flexible devices.