The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Aug. 05, 2014
Applicant:
International Solar Energy Research Center Konstanz E.v., Constance, DE;
Inventors:
Assignee:
ION BEAM SERVICES, Peynier, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/265 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 21/26513 (2013.01); H01L 31/02167 (2013.01); H01L 31/068 (2013.01); H01L 31/1864 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
The invention relates to a method for producing a solar cell () from crystalline semiconductor material, wherein a first doping region () is formed by means of ion implantation (S) of a first dopant in a first surface () of a semiconductor substrate (), and a second doping region () is formed by means of ion implantation (S) or thermal indiffusion of a second dopant in the second surface () of the semiconductor substrate. After the doping of the second surface, a cap () acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S) is subsequently carried out.