The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
May. 01, 2017
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/465 (2006.01); H01L 29/24 (2006.01); H01L 51/05 (2006.01); H01L 27/12 (2006.01); G03C 1/09 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02194 (2013.01); H01L 21/02244 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 21/02568 (2013.01); H01L 21/465 (2013.01); H01L 21/6835 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/42356 (2013.01); H01L 29/42364 (2013.01); H01L 29/42384 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01); H01L 29/78603 (2013.01); H01L 29/78618 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 51/0529 (2013.01); H01L 51/0554 (2013.01); H01L 51/0558 (2013.01); G03C 2001/095 (2013.01); H01L 2221/68363 (2013.01);
Abstract
A strain gated transistor and associated methods are shown. In one example, a transistor channel region includes a metal dichalcogen layer that is stressed to improve electrical properties of the transistor.