The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Feb. 08, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Noriyuki Iwamuro, Tsukuba, JP;
Shinsuke Harada, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
In an embodiment, on an ntype SiC layer on an n-type SiC semiconductor substrate and a player selectively formed on the ntype SiC layer, a p base layer is formed on which, a pcontact layer is selectively formed. From a surface, an n counter layer penetrates the p base layer to the ntype SiC layer. A gate electrode layer is disposed via a gate insulating film, on an exposed surface of the p base layer between the pcontact layer and the n counter layer; and a source electrode contacts the pcontact layer and the p base layer. In a back surface, a drain electrode is disposed. A portion of the players are joined at a region of a drain electrode side of the n counter layer, by a joining unit and a player contacts a drain electrode side of the player.