The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Jan. 18, 2018
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventor:
Ken Nakata, Yokohama, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 21/24 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/246 (2013.01); H01L 29/32 (2013.01); H01L 29/41766 (2013.01); H01L 29/7787 (2013.01); H01L 21/02499 (2013.01);
Abstract
A process of forming a HEMT that makes the contact resistance of a non-rectifying electrode consistent with other device performance is disclosed. The process includes steps of growing a GaN channel layer with a thickness smaller than 600 nm on a SiC substrate at a growth temperature lower than 1050° C. and growing an AlN spacer layer with a flow rate of NHat most 10% smaller than a summed flow rate of NHand H. The grown GaN channel layer includes a substantial density of threading dislocations and the grown AlN layer includes a substantial density of pits.