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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10263076 B1

PDFFull Text
Expired
Date of Patent:
Apr. 16, 2019

Filed:

Jan. 18, 2018

Semiconductor device having a gate electrode embedded in a trench

Applicant:

Ablic Inc., Chiba-shi, Chiba, JP;

Inventors:

Mitsuhiro Yoshimura, Chiba, JP;

Masahiro Hatakenaka, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:

Brinks Gilson & Lione

Primary Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract

To obtain a semiconductor device in which a reduction in channel formation density in a trench extending direction is suppressed, provided is a semiconductor device including a first region and a second region alternately arranged in the trench extending direction. The first region includes a first front surface semiconductor electrode layer of a first conductivity type having a portion along an outer side surface of the trench from the front surface of the semiconductor device to the first height to which a gate electrode is embedded into the trench. The second region includes a base contact region having a depth from the front surface of the semiconductor device to the second height higher than the first height and a second front surface semiconductor electrode layer of the first conductivity type from the first height to the second height.

Find Patent Forward Citations

Yoshimura, Mitsuhiro. (2019). Semiconductor device having a gate electrode embedded in a trench (U.S. Patent No. 10263076). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10263076

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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