The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Dec. 26, 2017
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Inventors:
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01J 37/317 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01J 37/3171 (2013.01); H01L 29/0623 (2013.01); H01L 29/0653 (2013.01); H01L 29/1608 (2013.01); H01L 29/42368 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes: forming a trench on a surface of a semiconductor substrate; forming an oxide film on side surfaces and a bottom surface of the trench; removing at least a part of the oxide film by dry etching from the bottom surface of the trench; and ion-implanting conductive impurities into the semiconductor substrate through the bottom surface of the trench after the dry etching. The dry etching is reactive ion etching in which etching gas including fluorocarbon based gas having a carbon atom ring structure, oxygen gas, and argon gas is used.