The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2019
Filed:
Mar. 08, 2017
Imec Vzw, Leuven, BE;
Steve Stoffels, Haasrode, BE;
Yoganand Saripalli, Leuven, BE;
IMEC VZW, Leuven, BE;
Abstract
The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (MCL) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. The present disclosure is also related to a method for producing a device according to the present disclosure.