The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Oct. 21, 2015
Applicant:

Siemens Aktiengesellschaft, Munich, DE;

Inventors:

Rene Fischer, Erlangen, DE;

Andreas Kanitz, Hoechstadt, DE;

Oliver Schmidt, Erlangen, DE;

Sandro Francesco Tedde, Weisendorf, DE;

Assignee:

SIEMENS HEALTHCARE GMBH, Erlangen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/30 (2006.01); G21K 4/00 (2006.01); B28B 3/00 (2006.01); C30B 29/12 (2006.01); G01T 1/24 (2006.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/308 (2013.01); B28B 3/00 (2013.01); C30B 29/12 (2013.01); G01T 1/24 (2013.01); G21K 4/00 (2013.01); H01G 9/0036 (2013.01); H01G 9/2009 (2013.01); H01L 51/0007 (2013.01); H01L 51/4253 (2013.01); H01L 51/442 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/0047 (2013.01); H01L 51/0077 (2013.01);
Abstract

The present disclosure relates to coated particles. The teachings thereof may be embodied in coated particles, a method for their production, and the use of the coated particles in X-ray detectors, gamma detectors, UV detectors, or solar cells. For example, some embodiments include particles comprising: perovskite crystals of the type ABXor ABX; wherein A comprises at least one monovalent, divalent, or trivalent element from the fourth or a higher period in the periodic table or mixtures thereof; B comprises a monovalent cation, the volumetric parameter of which is sufficient, with the respective element A, for perovskite lattice formation; and X is selected from the group consisting of halides and pseudohalides, and mixtures thereof; and a coating of at least one semiconductor material surrounding a nucleus comprising the perovskite crystals.


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